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SML1001R3AN Datasheet - Seme LAB

SML1001R3AN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

LAB TO3 Package Outline. Dimensions in mm (Inches) SEME SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN 1000V 900V 1000V 900V 9.5A 9.5A 8.5A 8.5A 1.10W 1.10W 1.30W 1.30W POWER MOS IV™ N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25°C unless otherwise stated) Parameter VDSS ID IDM VGS PD TJ , TSTJ Drain Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate Source Voltage Total Power Dissipation @ Tcase = 25°C Derate a.

SML1001R3AN_SemeLAB.pdf

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Datasheet Details

Part number:

SML1001R3AN

Manufacturer:

Seme LAB

File Size:

60.94 KB

Description:

N-channel enhancement mode high voltage power mosfets.

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SML1001R3AN SML1001R3AN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Seme LAB

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