HFC1N70 - N-Channel MOSFET

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Datasheet Details

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 4.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 14.0 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-126 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage.

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Published: Jun 7, 2015 |