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HFC2N60U - 600V N-Channel MOSFET

SemiHow

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Datasheet Details

Part number	HFC2N60U
Manufacturer	SemiHow
File Size	177.42 KB
Description	600V N-Channel MOSFET
Datasheet	HFC2N60U-SemiHow.pdf

HFC2N60U Product details

Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 4 ȍ7S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 600 V RDS(on) typ = ȍ ID = 2 A TO-126 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS.

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Published: Jun 27, 2016 |