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HFI9N50 Datasheet - SemiHow

N-Channel MOSFET

HFI9N50 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.58 Ω (Typ.) @VGS=10V  100% Avalanche Test

HFI9N50 Datasheet (0.96 MB)

Preview of HFI9N50 PDF

Datasheet Details

Part number:

HFI9N50

Manufacturer:

SemiHow

File Size:

0.96 MB

Description:

N-channel mosfet.

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