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HFS10N60S N-Channel MOSFET

HFS10N60S Description

HFS10N60S Nov 2007 HFS10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID = 9.5 A .

HFS10N60S Features

* ˜ Originative New Design ˜ Superior Avalanche Rugged Technology ˜ Robust Gate Oxide Technology ˜ Very Low Intrinsic Capacitances ˜ Excellent Switching Characteristics ˜ Unrivalled Gate Charge : 29 nC (Typ. ) ˜ Extended Safe Operating Area ˜ Lower RDS(ON) : 0.67 ȍ (Typ. ) @VGS=10V ˜ 100% Avalanche Test

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Datasheet Details

Part number
HFS10N60S
Manufacturer
SemiHow
File Size
246.27 KB
Datasheet
HFS10N60S-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
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