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HFS2N60S 600V N-Channel MOSFET

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Description

HFS2N60S Nov 2007 HFS2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 4.2 Ω ID = 2.0 A .

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Datasheet Specifications

Part number
HFS2N60S
Manufacturer
SemiHow
File Size
409.36 KB
Datasheet
HFS2N60S-SemiHow.pdf
Description
600V N-Channel MOSFET

Features

* ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 6.0 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 4.2 Ω (Typ. ) @VGS=10V ‰ 100% Avalanche Test

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