HFS830 Datasheet - SemiHow

HFS830 N-Channel MOSFET

HFS830 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.2 Ω (Typ.) @VGS=10V  100% Avalanche Teste

HFS830 Datasheet (794.14 KB)