HFU6N40S Datasheet - SemiHow

HFU6N40S 400V N-Channel MOSFET

HFU6N40S Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 16 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.83 Ω (Typ.) @VGS=10V  100% Avalanche Test

HFU6N40S Datasheet (769.19 KB)