Datasheet Specifications
- Part number
- HFU1N60
- Manufacturer
- SemiHow
- File Size
- 168.10 KB
- Datasheet
- HFU1N60-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFD1N60_HFU1N60 Dec 2005 HFD1N60 / HFU1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.9 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche TestHFU1N60 Distributors
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