HFU1N65S Datasheet, Mosfet, SemiHow

HFU1N65S Features

• Mosfet  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate

PDF File Details

Part number:

HFU1N65S

Manufacturer:

SemiHow

File Size:

371.09kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

TAGS

HFU1N65S

SemiHow

📁 Related Datasheet

HFU1N65 - N-Channel MOSFET (SemiHow)
HFD1N65 / HFU1N65 April 2006 HFD1N65 / HFU1N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.8 A FEATURES  Originative New Desi.

HFU1N60 - N-Channel MOSFET (SemiHow)
HFD1N60_HFU1N60 Dec 2005 HFD1N60 / HFU1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 0.9 A FEATURES ‰ Originative New Design ‰ .

HFU1N60F - 600V N-Channel MOSFET (SemiHow)
HFD1N60F_HFU1N60F Sep 2015 HFD1N60F / HFU1N60F 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 1 A FEATURES ‰ Originative New Design .

HFU1N60S - N-Channel MOSFET (SemiHow)
HFD1N60S / HFU1N60S Sep 2009 HFD1N60S / HFU1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.0 A FEATURES  Originative New Desi.

HFU1N70 - N-Channel MOSFET (SemiHow)
HFD1N70 / HFU1N70 Dec 2008 HFD1N70 / HFU1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 14.0 Ω ID = 0.8 A FEATURES  Originative New Design.

HFU1N80 - N-Channel MOSFET (SemiHow)
HFD1N80 / HFU1N80 April 2006 HFD1N80 / HFU1N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A FEATURES  Originative New Design.

HFU2N60 - N-Channel MOSFET (SemiHow)
HFD2N60_HFU2N60 July 2005 HFD2N60 / HFU2N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.8 A FEATURES ‰ Originative New Design ‰.

HFU2N60S - 600V N-Channel MOSFET (SemiHow)
HFD2N60S_HFU2N60S March 2014 HFD2N60S / HFU2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 1.9 A FEATURES ƒ Originative New Des.

HFU2N60U - N-Channel MOSFET (SemiHow)
HFD2N60U_HFU2N60U HFD2N60U / HFU2N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Ox.

HFU2N65 - N-Channel MOSFET (SemiHow)
HFU2N65 Nov 2008 HFU2N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 4.5 Ω ID = 1.6 A FEATURES  Originative New Design  Superior Avalanche.