Datasheet Specifications
- Part number
- HFU1N65S
- Manufacturer
- SemiHow
- File Size
- 371.09 KB
- Datasheet
- HFU1N65S-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFD1N65S / HFU1N65S HFD1N65S / HFU1N65S 650V N-Channel MOSFET .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 10.5 Ω (Typ. ) @VGS=10V April 2009 BVDSS =HFU1N65S Distributors
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