Datasheet Specifications
- Part number
- HFU1N80
- Manufacturer
- SemiHow
- File Size
- 766.91 KB
- Datasheet
- HFU1N80-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFD1N80 / HFU1N80 April 2006 HFD1N80 / HFU1N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 13 Ω (Typ. ) @VGS=10V 100% Avalanche TesteHFU1N80 Distributors
📁 Related Datasheet
📌 All Tags