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HFU1N80

N-Channel MOSFET

HFU1N80 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 7.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V  100% Avalanche Teste

HFU1N80 Datasheet (766.91 KB)

Preview of HFU1N80 PDF

Datasheet Details

Part number:

HFU1N80

Manufacturer:

SemiHow

File Size:

766.91 KB

Description:

N-channel mosfet.

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HFU1N80 N-Channel MOSFET SemiHow

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