Datasheet Specifications
- Part number
- HFU1N65
- Manufacturer
- SemiHow
- File Size
- 319.60 KB
- Datasheet
- HFU1N65-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFD1N65 / HFU1N65 April 2006 HFD1N65 / HFU1N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.8 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 10.5 Ω (Typ. ) @VGS=10V 100% Avalanche TesHFU1N65 Distributors
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