HFU1N70 Datasheet - SemiHow

HFU1N70 N-Channel MOSFET

HFU1N70 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 4.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 14.0 Ω (Typ.) @VGS=10V  100% Avalanche Tes

HFU1N70 Datasheet (695.58 KB)