HFW10N60 Datasheet - SemiHow

HFW10N60 N-Channel MOSFET

HFW10N60 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 44 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.64 Ω (Typ.) @VGS=10V  100% Avalanche Test

HFW10N60 Datasheet (601.68 KB)