Datasheet Details
- Part number
- HFW10N60
- Manufacturer
- SemiHow
- File Size
- 601.68 KB
- Datasheet
- HFW10N60-SemiHow.pdf
- Description
- N-Channel MOSFET
HFW10N60 Description
HFW10N60 Sep 2009 HFW10N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.64 Ω ID = 9.5 A .HFW10N60 Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 44 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.64 Ω (Typ. ) @VGS=10V 100% Avalanche Test
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