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HFW10N60 Datasheet - SemiHow

HFW10N60 N-Channel MOSFET

HFW10N60 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 44 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.64 Ω (Typ.) @VGS=10V  100% Avalanche Test

HFW10N60-SemiHow.pdf

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Datasheet Details

Part number:

HFW10N60

Manufacturer:

SemiHow

File Size:

601.68 KB

Description:

N-channel mosfet.

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