HFW10N60 - N-Channel MOSFET
HFW10N60 Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 44 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.64 Ω (Typ.) @VGS=10V 100% Avalanche Test
