HFW12N65S - N-Channel MOSFET
HFW12N65S Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ 7S #9GS=10V 100% Avalanche Teste
