HFW5N60S Datasheet - SemiHow

HFW5N60S N-Channel MOSFET

HFW5N60S Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 10.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V  100% Avalanche Tes

HFW5N60S Datasheet (819.00 KB)