HFW640 Datasheet - SemiHow

HFW640 200V N-Channel MOSFET

HFW640 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 37 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.145 Ω (Typ.) @VGS=10V  100% Avalanche Tes

HFW640 Datasheet (709.39 KB)