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HFW640 - 200V N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 37 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.145 Ω (Typ. ) @VGS=10V  100% Avalanche Tested D2-PAK I2-PAK 2 1 3 HFW640 1 2 3 HFI640 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Dra.

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Datasheet Details

Part number HFW640
Manufacturer SemiHow
File Size 709.39 KB
Description 200V N-Channel MOSFET
Datasheet download datasheet HFW640 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HFW640 / HFI640 Mar 2008 HFW640 / HFI640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.145Ω ID = 18 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 37 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.145 Ω (Typ.) @VGS=10V  100% Avalanche Tested D2-PAK I2-PAK 2 1 3 HFW640 1 2 3 HFI640 1.Gate 2. Drain 3.