HRP55N10K - 100V N-Channel Trench MOSFET

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Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 190 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 4.5 Pȍ (Typ. ) @VGS=10V 100% Avalanche Tested Oct 2016 BVDSS = 100 V RDS(on) typ = Pȍ ID = 170 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Dra.

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Published: Apr 13, 2017 |