HRP120N10K - 100V N-Channel Trench MOSFET
HRP120N10K Features
* Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V 100% Avalanche Tested March 2015 BVDSS = 100 V RDS(on) typ = 10 mΩ ID = 73 A TO-220
