HRP180N10K - N-Channel Trench MOSFET
HRP180N10K Features
* Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 85 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 15 mΩ (Typ.) @VGS=10V 100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ =15 mΩ ID = 65 A TO-22
