HRS180N10K - 100V N-Channel Trench MOSFET

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Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 85 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 15 Pȍ (Typ. ) @VGS=10V 100% Avalanche Tested Oct 2016 BVDSS = 100 V RDS(on) typ = 15 Pȍ ID = 65 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain C.

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Published: Nov 4, 2024 |