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HRS180N10K - 100V N-Channel Trench MOSFET

Key Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 85 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 15 Pȍ (Typ. ) @VGS=10V ‰ 100% Avalanche Tested Oct 2016 BVDSS = 100 V RDS(on) typ = 15 Pȍ ID = 65 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain C.

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Datasheet Details

Part number HRS180N10K
Manufacturer SemiHow
File Size 180.57 KB
Description 100V N-Channel Trench MOSFET
Datasheet download datasheet HRS180N10K Datasheet

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HRS180N10K HRS180N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 85 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 15 Pȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested Oct 2016 BVDSS = 100 V RDS(on) typ = 15 Pȍ ID = 65 A TO-220F 12 3 1.Gate 2. Drain 3.