Datasheet4U Logo Datasheet4U.com

SFD60N03L Datasheet - SemiWell Semiconductor

SFD60N03L Logic N-Channel MOSFET

www.DataSheet4U.com SFD60N03L Electrical Characteristics Symbol Off Characteristics BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 30 0.02 1 10 100 -100 V V/°C uA uA nA nA ( TC = 25 °C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units Breakdown Voltage Temperature coefID = 250uA, referenced to 25 °C ficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-Source Leakage, Reverse VDS = 30V, VGS = 0V VDS = 24V, TC = 125 °C VGS .

SFD60N03L Datasheet (1.26 MB)

Preview of SFD60N03L PDF
SFD60N03L Datasheet Preview Page 2 SFD60N03L Datasheet Preview Page 3

Datasheet Details

Part number:

SFD60N03L

Manufacturer:

SemiWell Semiconductor

File Size:

1.26 MB

Description:

Logic n-channel mosfet.

📁 Related Datasheet

SFD601G 6.0 AMPS. Glass Passivated Super Fast Rectifiers (Taiwan Semiconductor Company)

SFD602G 6.0 AMPS. Glass Passivated Super Fast Rectifiers (Taiwan Semiconductor Company)

SFD603G 6.0 AMPS. Glass Passivated Super Fast Rectifiers (Taiwan Semiconductor Company)

SFD604G 6.0 AMPS. Glass Passivated Super Fast Rectifiers (Taiwan Semiconductor Company)

SFD605G 6.0 AMPS. Glass Passivated Super Fast Rectifiers (Taiwan Semiconductor Company)

SFD606G 6.0 AMPS. Glass Passivated Super Fast Rectifiers (Taiwan Semiconductor Company)

SFD607G 6.0 AMPS. Glass Passivated Super Fast Rectifiers (Taiwan Semiconductor Company)

SFD608G 6.0 AMPS. Glass Passivated Super Fast Rectifiers (Taiwan Semiconductor Company)

TAGS

SFD60N03L Logic N-Channel MOSFET SemiWell Semiconductor

SFD60N03L Distributor