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SFD30N06

N-Channel MOSFET

SFD30N06 Features

* Low RDS(on) (0.04Ω )@VGS=10V Gate Charge (Typical 27nC) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { { 2. Drain

* 1. Gate ▲

* { 3. Source General Description This Power MOSFET is produced u

SFD30N06 General Description

This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well sui.

SFD30N06 Datasheet (1.17 MB)

Preview of SFD30N06 PDF

Datasheet Details

Part number:

SFD30N06

Manufacturer:

SemiWell Semiconductor

File Size:

1.17 MB

Description:

N-channel mosfet.

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TAGS

SFD30N06 N-Channel MOSFET SemiWell Semiconductor

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