• Part: SFD3010T
  • Description: 100A 30V N-CHANNEL MOSFET
  • Category: MOSFET
  • Manufacturer: HiSemicon
  • Size: 2.18 MB
Download SFD3010T Datasheet PDF
HiSemicon
SFD3010T
DESCRIPTION The SFD3010T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES - 100A,30V,RDS(on)(typ.)=4m@VGS=10V - Excellent package for good heat dissipation - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - High density cell design for ultra low Rdson - Special process technology for high ESD capability - Exceptional on-resistance and maximum DC currentcapability ORDERING INFORMATION Part No. SFD3010T Package TO-252-2L Marking SFD3010T Material Pb free ABSOLUTE MAXIMUM RATINGS TC = 25℃ unless otherwise noted Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC = 25°C TC = 100°C Drain Current Pulsed (Note 1) Symbol VDS VGS ID Maximum Power Dissipation Single Pulsed Avalanche Energy (Note 2) Operation Junction Temperature Range Storage Temperature Range Tstg Thermal...