SFD3012T Overview
The SFD3012T uses advanced trench technology and design to provide excellent RDS(pn) with low gate charge. It can be used in a wide variety applications.
SFD3012T Key Features
- VDS=30V,ID=120A -RDS(on) TYP:3.8mΩ@VGS=10V ID=40A
SFD3012T Datasheet Details
| Part number | SFD3012T |
|---|---|
| Datasheet | SFD3012T-HiSemicon.pdf |
| File Size | 730.14 KB |
| Manufacturer | HiSemicon |
| Description | 120A 30V N-CHANNEL MOSFET |
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