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SFD3012T - 120A 30V N-CHANNEL MOSFET

General Description

The SFD3012T uses advanced trench technology and design to provide excellent RDS(pn) with low gate charge.

It can be used in a wide variety applications.

Key Features

  • VDS=30V,ID=120A.
  • RDS(on) TYP:3.8mΩ@VGS=10V ID=40A.

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Datasheet Details

Part number SFD3012T
Manufacturer HiSemicon
File Size 730.14 KB
Description 120A 30V N-CHANNEL MOSFET
Datasheet download datasheet SFD3012T Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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120A, 30V N-CHANNEL MOSFET GENERAL DESCRIPTION The SFD3012T uses advanced trench technology and design to provide excellent RDS(pn) with low gate charge. It can be used in a wide variety applications. Features ◆VDS=30V,ID=120A ◆RDS(on) TYP:3.8mΩ@VGS=10V ID=40A Applications ◆Power faction correction (PFC) ◆Switched mode power supplies (SMPS) ◆Uninterruptible power supply (UPS) ◆LED lighting power SFD3012T 12 33 1:Gate 2:Darin 3:Source ORDERING INFORMATION Part No. SFD3012T Package TO-252-2L Http://www.hi-semicon.com Marking SFD3012T Material Pb Free Packing Reel Rev 1.