Datasheet Summary
120A, 30V N-CHANNEL MOSFET
GENERAL DESCRIPTION
The SFD3012T uses advanced trench technology and design to provide excellent RDS(pn) with low gate charge. It can be used in a wide variety applications.
Features
- VDS=30V,ID=120A
- RDS(on) TYP:3.8mΩ@VGS=10V ID=40A
Applications
- Power faction correction (PFC)
- Switched mode power supplies (SMPS)
- Uninterruptible power supply (UPS)
- LED lighting power
12 33
1:Gate 2:Darin 3:Source
ORDERING INFORMATION
Part No. SFD3012T
Package TO-252-2L
Http://.hi-semicon.
Marking SFD3012T
Material Pb Free
Packing Reel
Rev 1.0
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