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SFD3010T - 100A 30V N-CHANNEL MOSFET

General Description

The SFD3010T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • 100A,30V,RDS(on)(typ. )=4m@VGS=10V.
  • Excellent package for good heat dissipation.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • High density cell design for ultra low Rdson.
  • Special process technology for high ESD capability.
  • Exceptional on-resistance and maximum DC currentcapability SFD3010T.

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Datasheet Details

Part number SFD3010T
Manufacturer HiSemicon
File Size 2.18 MB
Description 100A 30V N-CHANNEL MOSFET
Datasheet download datasheet SFD3010T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
100A, 30V N-CHANNEL MOSFET GENERAL DESCRIPTION The SFD3010T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ◆ 100A,30V,RDS(on)(typ.)=4m@VGS=10V ◆ Excellent package for good heat dissipation ◆Fully characterized avalanche voltage and current ◆ Good stability and uniformity with high EAS ◆ High density cell design for ultra low Rdson ◆ Special process technology for high ESD capability ◆Exceptional on-resistance and maximum DC currentcapability SFD3010T ORDERING INFORMATION Part No.