HiSemicon SFD3010T
The SFD3010T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | SFD3010T |
|---|---|
| Datasheet | SFD3010T Download |
| Manufacturer |  HiSemicon |
| Description | 100A 30V N-CHANNEL MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
It can be used in a wide variety of applications.FEATURES
● 100A,30V,RDS(on)(typ.)=4m@VGS=10V● Excellent package for good heat dissipation
●Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● High density cell design for ultra low Rdson
● Special process technology for high ESD capability
●Exceptional on-resistance and maximum DC currentcapability SFD3010T ORDERING INFORMATION Part No. SFD3010T Package TO-252-2L Marking SFD3010T Material Pb free
ABSOLUTE MAXIMUM RATINGS
TC = 25℃ unless otherwise noted Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC = 25°C TC = 100°C Drain Current Pulsed (Note 1) Symbol VDS VGS ID IDM Maximum Power Dissipation PD Single Pulsed Avalanche Energy (Note 2) EAS Operation Junction Temperature Range TJ Storage Temperature Range Tstg Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case Ratings 30 ±20 100 63 400 83 200 -55～+150 -55～+150 Va...
