Datasheet Summary
100A, 30V N-CHANNEL MOSFET
GENERAL DESCRIPTION
The SFD3010T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Features
- 100A,30V,RDS(on)(typ.)=4m@VGS=10V
- Excellent package for good heat dissipation
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- High density cell design for ultra low Rdson
- Special process technology for high ESD capability
- Exceptional on-resistance and maximum DC currentcapability
ORDERING INFORMATION
Part No. SFD3010T
Package TO-252-2L
Marking SFD3010T
Material Pb...