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SFD2008T - 80A 20V N-CHANNEL MOSFET

General Description

The SFD2008T uses hi-semicon’s advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • RDS(on)(typ. )=4.0m@VGS=4.5V RDS(on)(typ. )=6.5m@VGS=2.5V.
  • Excellent package for good heat dissipation.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • High density cell design for ultra low Rdson.
  • Special process technology for high ESD capability.

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Datasheet Details

Part number SFD2008T
Manufacturer HiSemicon
File Size 2.82 MB
Description 80A 20V N-CHANNEL MOSFET
Datasheet download datasheet SFD2008T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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80A,20VN-CHANNELMOSFET SFD2008T GENERAL DESCRIPTION The SFD2008T uses hi-semicon’s advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ◆ RDS(on)(typ.)=4.0m@VGS=4.5V RDS(on)(typ.)=6.5m@VGS=2.5V ◆ Excellent package for good heat dissipation ◆ Fully characterized avalanche voltage and current ◆ Good stability and uniformity with high EAS ◆ High density cell design for ultra low Rdson ◆ Special process technology for high ESD capability Application ◆ Load Switch ◆ PWM Application ◆ Power management 12 33 1:Gate 2:Darin 3:Source ORDERING INFORMATION Part No.