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SFD3015T - 150A 30V N-CHANNEL MOSFET

General Description

The SFD3015T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Such as:PWM Applications,Power Management,etc.

Key Features

  • RDS(on)=2.6mΩ(Typ)@VGS=10V.
  • RDS(on)=4.1mΩ(Typ)@VGS=4.5V.
  • VDS=30V,ID=150A.
  • Low Crss:320pF(Typ)@VDS=25V.
  • Advance Trench Technology.
  • Fast Switching and High efficiency.
  • Lead Free and Green Devices Available:Rohs Compliant SFD3015T.

📥 Download Datasheet

Datasheet Details

Part number SFD3015T
Manufacturer HiSemicon
File Size 1.33 MB
Description 150A 30V N-CHANNEL MOSFET
Datasheet download datasheet SFD3015T Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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150A,30V N-CHANNEL MOSFET GENERAL DESCRIPTION The SFD3015T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Such as:PWM Applications,Power Management,etc. FEATURES ◆ RDS(on)=2.6mΩ(Typ)@VGS=10V ◆ RDS(on)=4.1mΩ(Typ)@VGS=4.5V ◆ VDS=30V,ID=150A ◆ Low Crss:320pF(Typ)@VDS=25V ◆ Advance Trench Technology ◆ Fast Switching and High efficiency ◆ Lead Free and Green Devices Available:Rohs Compliant SFD3015T ORDERING INFORMATION Part No. SFD3015T Package TO-252-2L Http://www.hi-semicon.com Marking SFD3015T Material Pb Free Packing Reel Rev 1.