Datasheet Summary
150A,30V N-CHANNEL MOSFET
GENERAL DESCRIPTION
The SFD3015T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Such as:PWM Applications,Power Management,etc.
Features
- RDS(on)=2.6mΩ(Typ)@VGS=10V
- RDS(on)=4.1mΩ(Typ)@VGS=4.5V
- VDS=30V,ID=150A
- Low Crss:320pF(Typ)@VDS=25V
- Advance Trench Technology
- Fast Switching and High efficiency
- Lead Free and Green Devices Available:Rohs pliant
ORDERING INFORMATION
Part No. SFD3015T
Package TO-252-2L
Http://.hi-semicon.
Marking SFD3015T
Material Pb Free
Packing Reel
Rev 1.0
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