Datasheet Summary
60A, 20V N-CHANNEL MOSFET
GENERAL DESCRIPTION
The SFD2006T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features
- 60A,20V,RDS(on)(typ.)=5.6m@VGS=4.5V
- Excellent package for good heat dissipation
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- High density cell design for ultra low Rdson
- Special process technology for high ESD capability
TO-252-2L
ORDERING INFORMATION
Part No. SFD2006T
Package TO-252-2L
Marking SFD2006T
Material Pb...