Datasheet Details
| Part number | SFD2006T |
|---|---|
| Manufacturer | HiSemicon |
| File Size | 2.74 MB |
| Description | 60A 20V N-CHANNEL MOSFET |
| Datasheet |
 SFD2006T Datasheet
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General Description
The SFD2006T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- 60A,20V,RDS(on)(typ. )=5.6m@VGS=4.5V.
- Excellent package for good heat dissipation.
- Fully characterized avalanche voltage and current.
- Good stability and uniformity with high EAS.
- High density cell design for ultra low Rdson.
- Special process technology for high ESD capability SFD2006T D S G TO-252-2L.