SFD2003T Description
The SFD2003T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
SFD2003T Key Features
- 30A,20V,RDS(on)(typ.)=8.8m@VGS=4.5V
- Excellent package for good heat dissipation -Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- High density cell design for ultra low Rdson
- Special process technology for high ESD capability -Exceptional on-resistance and maximum DC currentcapability