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SFD2003T - 30A 20V N-CHANNEL MOSFET

General Description

The SFD2003T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • 30A,20V,RDS(on)(typ. )=8.8m@VGS=4.5V.
  • Excellent package for good heat dissipation.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • High density cell design for ultra low Rdson.
  • Special process technology for high ESD capability.
  • Exceptional on-resistance and maximum DC currentcapability SFD2003T.

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Datasheet Details

Part number SFD2003T
Manufacturer HiSemicon
File Size 2.81 MB
Description 30A 20V N-CHANNEL MOSFET
Datasheet download datasheet SFD2003T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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30A, 20V N-CHANNEL MOSFET GENERAL DESCRIPTION The SFD2003T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ◆ 30A,20V,RDS(on)(typ.)=8.8m@VGS=4.5V ◆ Excellent package for good heat dissipation ◆Fully characterized avalanche voltage and current ◆ Good stability and uniformity with high EAS ◆ High density cell design for ultra low Rdson ◆ Special process technology for high ESD capability ◆Exceptional on-resistance and maximum DC currentcapability SFD2003T ORDERING INFORMATION Part No.