SFP830 Datasheet - SemiWell Semiconductor

SFP830 N-Channel MOSFET

This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant to.

SFP830 Features

* SFP830 N-Channel MOSFET Symbol ◀ {

* manufactured High ruggedness RDS(on) (Max 1.5 Ω )@VGS=10V { 2. Drain

* Gate Charge (Typical 28nC) Improved dv/dt Capability www.DataSheet4U.com

* 100% Avalanche Tested

* Maximum Junction Temperature Range (150°

SFP830_SemiWellSemiconductor.pdf