Mechanical Specifications
Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 18 kÅ min. Au - 6.5 kÅ nom. 4.0 mils x 4.0 m
✔ SQ2904A Application
Designed for general purpose switching and amplifier applications. Features:
Mechanical Specifications
Met
SQ201, Polyfet RF Devices
polyfet rf devices
SQ201
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil.
SQ202, Polyfet RF Devices
polyfet rf devices
SQ202
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil.
SQ2301CES, Vishay
.vishay.
SQ2301CES
Vishay Siliconix
Automotive P-Channel 20 V (D-S) 175 °C MOSFET
SOT-23 (TO-236)
D 3
2 S 1 G Top View
FEATURES • TrenchFET®.