2N2483 - NPN Transistor

Semicoa

Datasheet Details

High speed switching capabilities Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 19.5 kÅ min. Au - 6.5 kÅ nom. 3.6 mils diameter 2.5 mils diameter 8 mils nominal 18 mils x 18 mils Silox Passivated Electrical Characteristics TA = 25oC Parameter BVCEO BVCBO ICBO Test conditions IC = 10.0 mA, IB = 0 IC = 10 µA, IE = 0 VCB = 45 Vc, IE = 0 Min 60 60 --- Max ----10 Unit V dc V dc nA hFE IC = 100 µA dc, VCE =.

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Published: May 28, 2005 |