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SEMiX223GD12E4c IGBT

SEMiX223GD12E4c Description

SEMiX223GD12E4c SEMiX® 33c Trench IGBT Modules SEMiX223GD12E4c .

SEMiX223GD12E4c Features

* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient
* High short circuit capability

SEMiX223GD12E4c Applications

* br>
* AC inverter drives
* UPS
* Electronic Welding Remarks
* Case temperature limited to TC=125°C max.
* Product reliability results are valid for Tj=150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 8

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