SEMiX223GD12Vc Datasheet - Semikron International

SEMiX223GD12Vc IGBT

SEMiX223GD12Vc Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 323 246 225 675 -20 20 Tj = 125 °C 10 -40 175 Tc = 25 °C Tc = 80 °C 263 197 225 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 675 1161 -40 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 33c VGES tpsc Tj IF IFnom Inverse diode SEMiX223GD12Vc.

SEMiX223GD12Vc Features

* Homogeneous Si

* VCE(sat) with positive temperature coefficient

* High short circuit capability

* UL recognised file no. E63532 Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications

* AC inverter drives

* UPS

* Elect

SEMiX223GD12Vc Datasheet (276.87 KB)

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Datasheet Details

Part number:

SEMiX223GD12Vc

Manufacturer:

Semikron International

File Size:

276.87 KB

Description:

Igbt.

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