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SEMiX223GD12Vc IGBT

SEMiX223GD12Vc Description

SEMiX223GD12Vc Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc =.

SEMiX223GD12Vc Features

* Homogeneous Si
* VCE(sat) with positive temperature coefficient
* High short circuit capability

SEMiX223GD12Vc Applications

* br>
* AC inverter drives
* UPS
* Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Remarks
* Case temperature limited to TC=125°C max.
* Product reliability results a

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