SKM200GAR12E4 Datasheet - Semikron International

SKM200GAR12E4 IGBT

SKM200GAR12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 313 241 200 600 -20 20 Tj = 150 °C 10 -40 175 Tc = 25 °C Tc = 80 °C 229 172 200 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 990 -40 175 Tc = 25 °C Tc = 80 °C 229 172 200 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 990 -40 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 500 -40 125 4000 V A A A A V µs °C A .

SKM200GAR12E4 Features

* IGBT4 = 4. generation medium fast trench IGBT (Infineon)

* CAL4 = Soft switching 4. generation CAL-diode

* Isolated copper baseplate using DBC technology (Direct Bonded Copper)

* Increased power cycling capability

* With integrated gate resistor

* Fo

SKM200GAR12E4 Datasheet (395.23 KB)

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Datasheet Details

Part number:

SKM200GAR12E4

Manufacturer:

Semikron International

File Size:

395.23 KB

Description:

Igbt.

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