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SKM200GAR123D, SKM200GA123D IGBT

SKM200GAR123D Description

Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions 1) Values 123 D 123 D1 Units V V A A V W °C.

SKM200GAR123D Features

* MOS input (voltage controlled)
* N channel, Homogeneous Si
* Low inductance case
* Very low tail current with low temperature dependence
* High short circuit capability, self limiting to 6
* Icnom
* Latch-up free
* Fast & soft inverse CAL

SKM200GAR123D Applications

* → B6 - 153
* Switching (not for linear use) Tcase = 25 °C, unless otherwise specified 2) IF =
* IC, VR = 600 V,
* diF/dt = 1500 A/µs, VGE = 0 V 3) Use VGEoff = -5 -15 V 5) See fig. 2 + 3; RGoff = 5,6 Ω 6) The free-wheeling diodes of the GAL and GAR types have the data of th

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This datasheet PDF includes multiple part numbers: SKM200GAR123D, SKM200GA123D. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
SKM200GAR123D, SKM200GA123D
Manufacturer
Semikron
File Size
1.66 MB
Datasheet
SKM200GA123D_Semikron.pdf
Description
IGBT
Note
This datasheet PDF includes multiple part numbers: SKM200GAR123D, SKM200GA123D.
Please refer to the document for exact specifications by model.

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