SKM900GA12E4 Datasheet - Semikron International

SKM900GA12E4 IGBT

SKM900GA12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 1305 1003 900 2700 -20 20 Tj = 150 °C 10 -40 175 Tc = 25 °C Tc = 80 °C 871 651 800 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 2400 3520 -40 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 500 -40 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 4 IGBT4 Modules SKM900GA12E4 Target Dat.

SKM900GA12E4 Features

* IGBT4 = 4. Generation Medium Trench IGBT (Infineon)

* CAL4 = Soft switching 4. Generation CAL-Diode

* Isolated copper baseplate using DBC Technology (Direct Copper Bonding)

* UL recognized, file no. E63532

* Increased power cycling capability

* With

SKM900GA12E4 Datasheet (178.69 KB)