SKM900GA12E4 Datasheet - Semikron International

SKM900GA12E4, IGBT

SKM900GA12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 2.

Features

* IGBT4 = 4. Generation Medium Trench IGBT (Infineon)
* CAL4 = Soft switching 4. Generation CAL-Diode
* Isolated copper baseplate using DBC Technology (Direct Copper Bonding)
* UL recognized, file no. E63532
* Increased power cycling capability
* With

Applications

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* AC inverter drives UPS Electronic welders Switched reluctance motor Conditions IC = 900 A VGE = 15 V chiplevel chiplevel VGE = 15 V chiplevel VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V+ 15 V Tj = 25 °C VCC = 600 V IC = 900 A VGE = ±15 V RG o

SKM900GA12E4-SemikronInternational.pdf