* MOS input (voltage controlled)
* N channel, Homogeneous Si
* Low inductance case
* Very low tail current with low temperature dependence
* High short circuit capability, self limiting to 6
* Icnom
* Latch-up free
* Fast & soft inverse CAL
SKM100GAR123D Datasheet (942.38 KB)
SKM100GAR123D
Semikron
942.38 KB
Igbt.
Absolute Maximum Ratings
Symbol Conditions 1)
VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate
RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/8.
📁 Related Datasheet
SKM100GAR12F4 IGBT (Semikron)
SKM100GAR17E4 IGBT (Semikron)
SKM100GAL123D IGBT (Semikron)
SKM100GAL12F4 IGBT (Semikron)
SKM100GAL12T4 IGBT (Semikron International)
SKM100GAL163D IGBT (Semikron International)
SKM100GAL17E4 IGBT (Semikron)
SKM100GAxxxD SEMITRANS IGBT (Semikron International)
SKM100GB063D IGBT (Semikron International)
SKM100GB123D IGBT (Semikron International)
