SKM100GAR123D, SKM100GAL123D Datasheet - Semikron

SKM100GAR123D IGBT

Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= IC Tcase = 25/80 °C IFM= ICM Tcase = 25/80 °C; tp = 1 ms IFSM tp = 10 ms; sin.; Tj = 150 °C I2t tp = 10 ms; Tj = 150 °C Values 1200 1200 100 / 90 200 / 180 ± 20 690 40 . . .+150 (125) 2 500 7) Class F 40/125/56.

SKM100GAR123D Features

* MOS input (voltage controlled)

* N channel, Homogeneous Si

* Low inductance case

* Very low tail current with low temperature dependence

* High short circuit capability, self limiting to 6

* Icnom

* Latch-up free

* Fast & soft inverse CAL

SKM100GAL123D-Semikron.pdf

SKM100GAR123D Datasheet Preview — This datasheet PDF includes multiple part numbers: SKM100GAR123D, SKM100GAL123D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SKM100GAR123D, SKM100GAL123D

Manufacturer:

Semikron

File Size:

942.38 KB

Description:

Igbt.

Note:

This datasheet PDF includes multiple part numbers: SKM100GAR123D, SKM100GAL123D.
Please refer to the document for exact specifications by model.

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SKM100GAR123D SKM100GAL123D IGBT Semikron

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