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SEMiX302GAL17E4s IGBT

SEMiX302GAL17E4s Description

SEMiX302GAL17E4s SEMiX® 2s SEMiX302GAL17E4s .

SEMiX302GAL17E4s Features

* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient
* High short circuit capability

SEMiX302GAL17E4s Applications

* br>
* AC inverter drives
* UPS
* Electronic Welding Remarks
* Case temperature limited to TC=125°C max.
* Product reliability results are valid for Tj=150°C
* Dynamic values apply to the following combination of resistors: RGon,main = 1,95 Ω RGoff,mai

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