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SEMIX302GAL12E4S IGBT

SEMIX302GAL12E4S Description

SEMiX302GAL12E4s SEMiX® 2s Trench IGBT Modules SEMiX302GAL12E4s .

SEMIX302GAL12E4S Features

* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient
* High short circuit capability

SEMIX302GAL12E4S Applications

* br>
* AC inverter drives
* UPS
* Electronic Welding Remarks
* Case temperature limited to TC=125°C max.
* Product reliability results are valid for Tj=150°C
* Dynamic values apply to the following combination of resistors: RGon,main = 0,5  RGoff,main

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