SEMIX303GD12VC Datasheet - Semikron

SEMIX303GD12VC High short circuit capability

SEMiX303GD12Vc Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 448 342 300 900 -20 20 Tj = 125 °C 10 -40 175 Tc = 25 °C Tc = 80 °C 327 244 300 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 1485 -40 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 33c VGES tpsc Tj IF IFnom Inverse diode SEMiX303GD12Vc.

SEMIX303GD12VC Features

* Homogeneous Si

* VCE(sat) with positive temperature coefficient

* High short circuit capability

* UL recognised file no. E63532 Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications

* AC inverter drives

* UPS

* Elect

SEMIX303GD12VC_Semikron.pdf