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SK150MLI07S5TD1E2 - IGBT

SK150MLI07S5TD1E2 Description

SK150MLI07S5TD1E2 SEMITOP®E2 3-Level NPC SK150MLI07S5TD1E2 .

SK150MLI07S5TD1E2 Features

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* Optimized design for superior thermal performance
* Low inductive design
* Press-Fit contact technology
* Split IGBT gates for optimized driving
* 650V Trench5 IGBT (S5/L5)
* Rapid switching diode technology
* Integrated NTC temperature

SK150MLI07S5TD1E2 Applications

* UPS
* Solar Remarks
* Recommended Tj,op=-40 +150 °C
* IGBTs characteristics are valid for paralleled chips (split gates connected)
* IGBT1: outer IGBTs T1 & T4
* IGBT2: inner IGBTs T2 & T3
* Diode1: outer Diodes D1 & D4
* Diode2:

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Semikron SK150MLI07S5TD1E2-like datasheet