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SK75GARL07S5TD1E1 IGBT

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Description

SK75GARL07S5TD1E1 SEMITOP®E1 Symmetrical Boost Engineering Sample SK75GARL07S5TD1E1 Target Data .

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Datasheet Specifications

Part number
SK75GARL07S5TD1E1
Manufacturer
Semikron
File Size
732.85 KB
Datasheet
SK75GARL07S5TD1E1-Semikron.pdf
Description
IGBT

Features

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* Optimized design for superior thermal performances
* Low inductive design
* Press-Fit contact technology
* 650V Trench5 IGBT (S5)
* Rapid switching diode technology
* Integrated NTC temperature sensor
* UL recognized file no. E 63 532 Ty

Applications

* UPS
* Solar Remarks
* Recommended Tjop= -40 +150°C
* Diode1: outer Freewheeling Diodes
* Diode2: inner Antiparalell Diodes Absolute Maximum Ratings Symbol Conditions IGBT 1 VCES IC IC ICnom ICRM VGES tpsc Tj Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpas

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