SKiM459GD12E4V2 Datasheet - Semikron

SKiM459GD12E4V2 IGBT

SKiM459GD12E4V2 Features

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* IGBT 4 Trench Gate Technology

* Solderless sinter technology

* VCE(sat) with positive temperature coefficient

* Low inductance case

* Insulated by Al2O3 DBC (Direct Bonded Copper) ceramic substrate

* Pressure contact technology for thermal conta

Datasheet Details

SKiM459GD12E4V2

Semikron

839.94 KB

Igbt.

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SKiM459GD12E4V2 IGBT Semikron

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