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SKiM406GD066HD IGBT

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Description

SKiM406GD066HD Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V VGES tpsc Tj Inverse diode I.

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Features

* IGBT 3 Trench Gate Technology
* Solderless sinter technology
* VCE(sat) with positive temperature coefficient
* Low inductance case
* Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate
* Pressure contact technology for thermal contacts an

Applications

* Automotive inverter
* High reliability AC inverter wind
* High reliability AC inverter drives VGE=VCE, IC = 6.4 mA VGE = 0 V VCE = 600 V VCE = 25 V VGE = 0 V VGE = - 8 V+ 15 V Tj = 25 °C VCC = 300 V IC = 400 A RG on = 3 Ω RG off = 5 Ω di/dton = 5900 A/µs di/dtoff = 6000 A/

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