* IGBT 3 Trench Gate Technology
* Solderless sinter technology
* VCE(sat) with positive temperature coefficient
* Low inductance case
* Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate
* Pressure contact technology for thermal contacts an
SKiM406GD066HD Datasheet (204.39 KB)
SKiM406GD066HD
Semikron International
204.39 KB
Igbt.
SKiM406GD066HD
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V VGES tpsc Tj Inverse diode I.
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