SKiM406GD066HD Datasheet - Semikron International

SKiM406GD066HD IGBT

SKiM406GD066HD Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V VGES tpsc Tj Inverse diode IF Ts = 25 °C Ts = 70 °C Tj = 150 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C 600 383 304 400 800 -20 20 6 -40 175 320 249 300 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 2340 -40 175 700 -40 125 AC sinus 50 Hz, t = 1 min 2500 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SKiM® 63 Trench IGBT Modules SKiM406GD066HD Tj = 175 .

SKiM406GD066HD Features

* IGBT 3 Trench Gate Technology

* Solderless sinter technology

* VCE(sat) with positive temperature coefficient

* Low inductance case

* Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate

* Pressure contact technology for thermal contacts an

SKiM406GD066HD Datasheet (204.39 KB)