* IGBT 4 Trench Gate Technology Solderless sinter technology Low inductance case Isolated by AL2O3 DCB (Direct Copper Bonded) ceramic substrate
* Pressure contact technology for thermal contacts and electrical contacts
* High short circuit capability, self limiting to 6 x IC
SKiM429GD17E4HD Datasheet (238.08 KB)
SKiM429GD17E4HD
Semikron International
238.08 KB
Igbt.
SKiM429GD17E4HD
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 1200 V VGE ≤ 15 V VCES ≤ 1700 V VGES tpsc Tj Inverse diod.
📁 Related Datasheet
SKiM429GD17E44F IGBT (Semikron)
SKiM429GD17E4V5 IGBT (Semikron)
SKIM400GD063D IGBT (Semikron International)
SKIM400GD126DM IGBT (Semikron International)
SKIM400GD128D IGBT (Semikron International)
SKiM401MLI07E4 IGBT (Semikron)
SKiM401TMLI12E4B IGBT (Semikron)
SKiM406GD066HD IGBT (Semikron International)
SKIM450GD126D IGBT (Semikron International)
SKiM450GD126DL IGBT (Semikron International)
