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SKiM429GD17E4HD IGBT

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Description

SKiM429GD17E4HD Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 1200 V VGE ≤ 15 V VCES ≤ 1700 V VGES tpsc Tj Inverse diod.

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Features

* IGBT 4 Trench Gate Technology Solderless sinter technology Low inductance case Isolated by AL2O3 DCB (Direct Copper Bonded) ceramic substrate
* Pressure contact technology for thermal contacts and electrical contacts
* High short circuit capability, self limiting to 6 x IC

Applications

* Automotive inverter
* High reliability AC inverter wind
* High reliability AC inverter drives VGE=VCE, IC = 16.8 mA VGE = 0 V VCE = 1700 V VCE = 25 V VGE = 0 V VGE = - 8 V+ 15 V Tj = 25 °C VCC = 1200 V IC = 420 A RG on = 3.6 Ω RG off = 3.6 Ω di/dton = 5200 A/µs di/dtoff =

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