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SEMIX252GB126HDS IGBT

SEMIX252GB126HDS Description

SEMiX252GB126HDs SEMiX® 2s Trench IGBT Modules SEMiX252GB126HDs .

SEMIX252GB126HDS Features

* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient
* High short circuit capability

SEMIX252GB126HDS Applications

* br>
* AC inverter drives
* UPS
* Electronic Welding Remarks
* Case temperatur limited to TC=125°C max.
* Not for new design Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom

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