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PE592120Q N-Channel Enhancement Mode Power MOSFET

PE592120Q Description

N-Channel Enhancement Mode Power MOSFET .
The PE592120Q uses deep trench technology to provide excellent RDS(ON) and low gate charge.

PE592120Q Features

* VDS =135V, ID =120A RDS(ON) < 5.0mΩ @ VGS=10V
* High Power and current handing capability

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Datasheet Details

Part number
PE592120Q
Manufacturer
Semione
File Size
635.56 KB
Datasheet
PE592120Q-Semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Semione
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