PE504BA Datasheet - UNIKC

PE504BA MOSFET

PE504BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 10mΩ @VGS = 10V ID 31A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Avalanche Current Tc = 25 °C Tc = 100 °C TA = 25 °C TA= 70 °C ID IDM IAS 31 20 12 9 70 26 Avalanche Energy EAS 33 TC = 25 °C Power Dissipation TC = 100 °C TA = 25 °C TA = 70 °C Operating J.

PE504BA Datasheet (448.99 KB)